TOPICS OF GREEN ENGINEERING 3

理工学部 - 機能創造理工学科

SEA6620E

コース情報

担当教員: PERIYANAYAGAM Gandhi Kallarasan

単位数: 2

年度: 2024

学期: 2クォーター

曜限: 木5, 金5

形式: 対面授業+オンライン授業(オンデマンド授業,同時双方向型授業(Zoomなど)) /Alternating face-to-face & A

レベル: 400

アクティブラーニング: あり

他学部履修: 不可

評価方法

出席状況

30%

定期試験

定期試験期間中

40%

小テスト等

30%

詳細情報

概要

This course covers the basic microelectronics circuit design. You will study microelectronics circuit design using diode, and MOS transistor. The fundamental knowledge of electronics such as voltage and current, ohm’s law, Thevnin’s theory and so on are required. You are required to take Engineering and applied science 3 before this course. The detail arrangement are like the following: Classes are planned to be held in face-to-face, however, there is a possibility that some of them will be offered on internet-based bi-directional synchronous class (e.g. Zoom) depending on situations. For students who cannot attend face-to-face classes, learning contents will be offered b real-time bi-directional methods via Zoom.

目標

The objective of the course is to let the students - understand the basic microelectronics circuit - know the models of basic semiconductor devices - get familiar with the basic integrated amplifiers. Among Diploma Policy in Green Engineering Program, the objective of this course is to achieve the basic creativity of new systems in the perspectives of “understanding of materials and creation of materials / devices” and “manufacturing and creating systems” required in the diploma policy 3.

授業外の学習

All students need to read the corresponding chapters of the textbooks (95 mins). Almost every week, some homework will be assigned (95 mins).

所要時間: 190 mins

スケジュール

  1. Introduction to PN junction and diode models
  2. Diode circuit analysis I ‒ Rectifier, half-wave rectifier and full-wave rectifier
  3. Diode circuit analysis II ‒ limiter, voltage doubler and level shifter
  4. Introduction to MOSFET, structure of MOSFET, basic operation of MOSFET, behavior of channel
  5. MOS characteristics I - derivation of I/V characteristics, region of operation
  6. MOS characteristics II - simple MOS model, channel length modulation, etc
  7. Practice
  8. Biasing, Transconductance
  9. Large signal and small signal operation
  10. Small-signal model, PMOS device
  11. Common-source topology
  12. Biasing technique, introduction to CG stage
  13. Source follower
  14. Final exam

教科書

Fundamentals of microelectronics

  • Microelectronics Circuits 5e (The Oxford Series in Electrical and Computer Engineering)

    著者: Adel S. Sedra, Kenneth C. Smith

    出版社: Oxford University Press Inc., 2007

  • Fundamentals of Microelectronics, 2nd edition

    著者: Behzad Razavi

    出版社: Wiley, 2013

参考書

書籍情報はありません。

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